RF power UHF/DVB-T broadcasting at its best brochure

Supporting all broadcast amplifier designs in the 470 to 860 MHz band, this complete family of transistors delivers up to one octave wideband operation combined with field-proven ruggedness, highest efficiency, and outstanding linearity.

NXP's Unbreakable BLF578XR LDMOS Power Transistor

Tired of replacing tired, dead power transistors? Check out NXP's Unbreakable BLF578XR LDMOS RF Power Transistor in this video - and find out just how rugged eXtremely Rugged is! Would you dare to treat your transistor like this?

News announcing the "eXtremely Rugged" XR family of LDMOS RF Power Transistors (June 8, 2011):
http://www.nxp.com/news/content/file_1909.html

Shipping more than 4 billion RF products annually, NXP is a clear industry leader in high performance RF. Visit NXP's web site to learn more about High Performance RF for the most demanding applications.

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NXP High Performance RF Technology
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The NXP BLF178P is a 1200W LDMOS power transistor targeted for use in broadcast (FM Transmitter) designs as well as industrial, scientific and medical (ISM) applications in the HF to 110MHz band. This high voltage (43 – 50V) transistor offers a lower cost alternative to devices currently on the market and provides high gain (26dB), high power (1200W) and high efficiency (75%). Although characterized to 110MHz, the BLF178P operates to 500MHz making it ideal for applications such as military radio, RF jamming, and exciters for MRI and CO2 lasers. This extremely rugged device is housed in a flanged Gemini package. See the BLF178P at IMS2011 in Baltimore at RFMW's booth # 2507

Performance Graphs for FM Transmitter Applications at 43 V and 50 V 

Download softcopies of the latest NXP publications and Product Guides

NXP RF Manual 15th Edition	NXP Aerospace & Defense Brochure
> Download (2.62 MB)	> Download PDF (10MB)
NXP RF Solutions for Infrastructure	NXP High Performance Products Brochure
> Download PDF (5MB)	> Download PDF (4MB)

NXP Product News

• BLA6H0912-500 - 960-1200MHz LDMOS Avionics Radar Power Transistor
• Ultra Low Noise LO Generators for Microwave Radio Applications (7 - 15GHz)
• NXP to offer 50 RF/Microwave products based on SiGe:C BiCMOS process technology

NXP Application Notes

• Biasing 50V GaN Demonstration Boards
• A Low Impedance PIN Diode Driver Circuit with Temperature Compensation
• 2.45 GHz T/R, RF switch for e.g. bluetooth application using PIN diodes
• Using the BLF574 in the 88 MHz to 108 MHz FM band
• Using the BLF578 in the 88 MHz to 108 MHz FM band
• 174 MHz to 230 MHz DVB-T power amplifier with the BLF578
• Doherty RF performance analysis using the BLF7G22LS-130