P1dB: RF Power Transistor: P1dB: 2N6080
| 2N6080 |
| RF Power Transistor, up to 0.175 GHz, 4 W, 12 dB, 12.5 V, BiPolar, Ceramic |
| |
| Manufacturer: | P1dB |
| Status: | Standard |
| Datasheet: | Request Datasheet |
| RoHS Compliance : | No |
|
Frequency Max:
0.175 GHz
|
|
Output Power:
4 W
|
|
Gain:
12 dB
|
|
% typ. Efficiency:
50
|
|
Supply Voltage:
12.5 V
|
|
Package:
Ceramic
|
|
Process:
BiPolar
|