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2N6080

2N Transistors from P1dB

RF Power Transistor, up to 0.175 GHz, 4 W, 12 dB, 12.5 V, BiPolar, Ceramic

Status: Standard | Datasheet: Request Data Sheet | RoHS Compliance:

Part Number: 2N6080
Manufacturer: P1dB
Frequency Max: 0.175 GHz
Output Power: 4 W
Gain: 12 dB
% Typ Efficiency: 50
Supply Voltage: 12.5 V
Package: Ceramic
Process: BiPolar
Type: RF Power Discrete Transistors

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Product Specifications For 2N6080 RF Power Transistor

Part Number: 2N6080 Manufacturer: P1dB Product Description: RF Power Transistor, up to 0.175 GHz, 4 W, 12 dB, 12.5 V, BiPolar, Ceramic

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Description	Units Per Format	Available

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2N6080

2N Transistors from P1dB

RF Power Transistor, up to 0.175 GHz, 4 W, 12 dB, 12.5 V, BiPolar, Ceramic

Technical Inquiry Request for 2N6080 RF Power Transistor

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2N6080

2N Transistors from P1dB

RF Power Transistor, up to 0.175 GHz, 4 W, 12 dB, 12.5 V, BiPolar, Ceramic

Technical Inquiry Request for 2N6080 RF Power Transistor

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