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BFU725F/N1,115

Transistors from NXP

Transistor, LNA, NPN Wideband, SiGe, SOT343F

Status: Discontinued | Data Sheet:

| RoHS Compliance: Rohs Compliant

The NXP BFU725F/N1 NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Low noise high gain microwave transistor
Noise figure (NF) = 0.7 dB at 5.8 GHz
High maximum stable gain 27 dB at 1.8 GHz
110 GHz f_T silicon germanium technology

Part Number: BFU725F/N1,115
Manufacturer: NXP
Product Family: NPN
Frequency Min: 1.5 GHz
Frequency Max: 6 GHz
Output Power: 9 dBm
Gain: 19 dB
Package: SOT-343F
Supply Voltage: 10 V
Id: 25 to 40 mA
Noise Figure: 0.5 dB
Material: SiGe

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Part Function	Part Number	Description
Design Kit	OM7827/BFU6AND7XXK NXP	RF Transistor Starter Kit for NXP RF Wideband Transistors BFU6x0F and BFU7x0F

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Product Specifications For BFU725F/N1,115 Transistors

Part Number: BFU725F/N1,115 Manufacturer: NXP Product Description: Transistor, LNA, NPN Wideband, SiGe, SOT343F

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BFU725F/N1,115

Transistors from NXP

Transistor, LNA, NPN Wideband, SiGe, SOT343F

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BFU725F/N1,115

Transistors from NXP

Transistor, LNA, NPN Wideband, SiGe, SOT343F

Technical Inquiry Request for BFU725F/N1,115 Transistors

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