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BFU730F,115

Transistors from NXP

Transistor, Low Noise, 1.5 - 6 GHz, 20 dB, 10V, SOT343F

Status: Discontinued | Data Sheet:

| RoHS Compliance: Rohs Compliant

The NXP BFU730F NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Low noise high gain microwave transistor
Noise figure (NF) = 0.8 dB at 5.8 GHz
High maximum stable gain 18.5 dB at 5.8 GHz
110 GHz f_T silicon germanium technology

Part Number: BFU730F,115
Manufacturer: NXP
Frequency Min: 1.5 GHz
Frequency Max: 6 GHz
Output Power: 12 dBm
Gain: 20 dB
Package: SOT-343F
Supply Voltage: 10 V
Id: 5 to 30 mA
Noise Figure: 0.8 dB
Material: SiGe

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Part Function	Part Number	Description
Evaluation Board	OM7690/BFU730F,598 NXP	Evaluation board for BFU730F
Design Kit	OM7827/BFU6AND7XXK NXP	RF Transistor Starter Kit for NXP RF Wideband Transistors BFU6x0F and BFU7x0F

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Product Specifications For BFU730F,115 Transistors

Part Number: BFU730F,115 Manufacturer: NXP Product Description: Transistor, Low Noise, 1.5 - 6 GHz, 20 dB, 10V, SOT343F

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Description	Units Per Format	Available

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BFU730F,115

Transistors from NXP

Transistor, Low Noise, 1.5 - 6 GHz, 20 dB, 10V, SOT343F

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BFU730F,115

Transistors from NXP

Transistor, Low Noise, 1.5 - 6 GHz, 20 dB, 10V, SOT343F

Technical Inquiry Request for BFU730F,115 Transistors

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