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MRF422

MRF Transistors from P1dB

RF Power Transistor, 0.001 to 0.03 GHz, 150 W, 10 dB, 28 V, BiPolar, Ceramic

Status: Standard | Datasheet: Request Data Sheet | RoHS Compliance: Rohs Compliant

Part Number: MRF422
Manufacturer: P1dB
Frequency Min: 0.001 GHz
Frequency Max: 0.03 GHz
Output Power: 150 W
Gain: 10 dB
% Typ Efficiency: 40
Supply Voltage: 28 V
Package: Ceramic
Process: BiPolar
Type: RF Power Discrete Transistors

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Product Specifications For MRF422 RF Power Transistor

Part Number: MRF422 Manufacturer: P1dB Product Description: RF Power Transistor, 0.001 to 0.03 GHz, 150 W, 10 dB, 28 V, BiPolar, Ceramic

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Description	Units Per Format	Available

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MRF422

MRF Transistors from P1dB

RF Power Transistor, 0.001 to 0.03 GHz, 150 W, 10 dB, 28 V, BiPolar, Ceramic

Technical Inquiry Request for MRF422 RF Power Transistor

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MRF422

MRF Transistors from P1dB

RF Power Transistor, 0.001 to 0.03 GHz, 150 W, 10 dB, 28 V, BiPolar, Ceramic

Technical Inquiry Request for MRF422 RF Power Transistor

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