TriQuint Semiconductor, Inc: RF Power Transistor: T1G4003532-FS
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T1G4003532-FS
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| RF Power Transistor, DC to 3.5 GHz, 35 W, 16 dB, 32 V, GaN |
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| Manufacturer: | TriQuint Semiconductor, Inc |
| Status: | No new designs |
| Datasheet: | T1G4003532-FS DataSheet |
| RoHS Compliance: |  Yes |
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Frequency Min:
0 GHz
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Frequency Max:
3.5 GHz
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Output Power:
35 W
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Gain:
16 dB
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% typ. Efficiency:
54
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Supply Voltage:
32 V
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Id:
150 mA
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Process:
GaN
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35W, 32V, DC-3.5GHz GaN RF Power Transistor
The TriQuint T1G4003532-FS is a 35 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint's proven 0.25 um process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
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