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TriQuint: RF Power Transistor: T1G6003028-FS

RF & Microwave Products from RFMW, Ltd


T1G6003028-FS
RF Power Transistor, DC- 6 GHz, 30 W, 14 dB, 28V, GaN
Manufacturer:TriQuint
Status:Obsolete
Datasheet:T1G6003028-FS DataSheet
RoHS Compliance: TriQuint, T1G6003028-FS, RF Power Transistor, RF Power Transistor, DC- 6 GHz, 30 W, 14 dB, 28V, GaN (Rohs Compliant), RFMW Ltd (RFMW)Yes
Specifications:
Frequency Min:
0 GHz
Frequency Max:
6 GHz
Output Power:
30 W
Gain:
14 dB
% typ. Efficiency:
50
Supply Voltage:
28 V
Id:
200 mA
Package:
Earless
Process:
GaN

Also Available...

Part FunctionPart NumberDescription
Replacement T2G6003028-FS RF Power Transistor, DC to 6 GHz, 30 W, 14 dB, 28 V, GaN
Replacement T2G6003028-FL RF Power Transistor, DC to 6 GHz, 30 W, 14 dB, 28 V, GaN
Evaluation Board T2G6003028-FL-EVB Evaluation board for T2G6003028-FL
TriQuint, RF Power Transistor, T1G6003028-FS, RFMW Ltd (RFMW)
The TriQuint T1G6003028-FS is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint’s proven 0.25 um process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
Pricing
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1 - 24 $141.00
25 - 99 $121.95
100 - 249 $105.48
250 - 499 $100.20
500 - 999 $95.19
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