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TriQuint: Amplifier: TGA2216-SM

Amplifier, RF Transistors, RFMW, Amplifiers and Modules, Passives, Control Components

Amplifier, Power, 0.1 to 3.0 GHz, 10 W, 21 dB, 40 V, GaN
Datasheet:TGA2216-SM DataSheet
RoHS Compliance: TriQuint, TGA2216-SM, Amplifier, Amplifier, Power, 0.1 to 3.0 GHz, 10 W, 21 dB, 40 V, GaN (Rohs Compliant), RFMW Ltd (RFMW)Yes
Frequency Min:
0.1 GHz
Frequency Max:
3 GHz
35 dBm
21 dB
Supply Voltage \ Vd:
40 V
Quiescent Current \ Id:
360 mA
QFN 5x5mm, QFN 5x5mm
Power Added Efficiency:
50 %
40 dBm
VSWR Input:
8 dB
VSWR Output:
11 dB

Also Available...

Part FunctionPart NumberDescription
Complementary Product TGA2216 Amplifier, Power, 0.1- 3.0 GHz, 12 W, 22 dB, 48 V, DIE
Complementary Product TGA2237-SM Amplifier, Power, .03- 2.5 GHz, 10 W, 19 dB, 32 V, GaN
TriQuint, Amplifier, TGA2216-SM, RFMW Ltd (RFMW)

TriQuint's TGA2216-SM is a wideband cascode amplifier fabricated on TriQuint's production 0.25um GaN on SiC process. The cascode configuration offers exceptional wideband performance as well as supporting 40V operation. The TGA2216-SM operates from 0.1 - 3.0 GHz and provides 10W of saturated output power with greater than 13dB of large signal gain and greater than 40% power-added efficiency.

The TGA2216-SM is available in a low-cost, surface mount 32 lead 5x5 AIN QFN. It is ideally suited to support both radar and communication applications across defense and commercial markets as well as electronic warfare. The TGA2216-SM is fully matched to 50 ohms at both RF ports allowing for simple system integration. DC blocks are required on both RF ports and the drain voltage must be injected through an off chip bias-tee on the RF output port.

Lead-free and RoHS compliant.

1 - 24 $165.00
25 - 99 $138.00
100+ $115.00
Available: Items not in stock
On OrderAvailable
+504 Weeks
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