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TriQuint: Transistors: TGF2080

RF & Microwave Products from RFMW, Ltd


TGF2080
Transistor, DC- 20 GHz, 29.5 dBm, 11.5 dB, 8V, DIE
Manufacturer:TriQuint
Status:Featured
Datasheet:TGF2080 DataSheet
RoHS Compliance: TriQuint, TGF2080, Transistors, Transistor, DC- 20 GHz, 29.5 dBm, 11.5 dB, 8V, DIE (Rohs Compliant), RFMW Ltd (RFMW)Yes
Specifications:
Frequency Min:
0 GHz
Frequency Max:
20 GHz
Output Power:
29.5 dBm
Gain:
11.5 dB
% typ. Efficiency:
56
Supply Voltage:
8 V
Id:
129 mA
Package:
DIE
Material:
GaAs pHEMT

Also Available...

Part FunctionPart NumberDescription
Complementary Product TGF2018 Transistor, DC- 20 GHz, 22 dBm, 14.5 dB, 1 dB NF, 8V DIE
Complementary Product TGF2025 Transistor, DC- 20 GHz, 25 dBm, 14 dB, 0.9 dB NF, 8V, DIE
Complementary Product TGF2040 Transistor, DC - 20 GHz, 26 dBm, 13 dB, 1.1 dB NF, 8V, DIE
Complementary Product TGF2060 Transistor, DC- 20 GHz, 28 dBm, 12 dB, 1.4 dB NF, 8V, DIE
TriQuint, Transistors, TGF2080, RFMW Ltd (RFMW)
The TriQuint TGF2080 is a discrete 800-Micron pHEMT which operates from DC to 20 GHz. The TGF2080 is designed using TriQuint's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.

The TriQuint TGF2080 typically provides 29.5 dBm of output power at P1dB with gain of 11.5 dB and 56% power-added efficiency at 1 dB compression. This performance makes the TGF2080 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.

Lead-free and RoHS compliant.
Pricing
QtyPrice
1 - 24 $13.56
25 - 99 $11.49
100 - 249 $9.74
250 - 499 $9.10
500 - 999 $8.51
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Availability
Available: 1569
Call for Delivery or Get a Quote
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