Qorvo: RF Power Transistor: T1G3000532-SM

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

T1G3000532-SM
RF Power Transistor, 0.03- 3.5 GHz, 5 W, 15.7 dB, 32 V, GaN
Manufacturer: Qorvo
Status: Standard
Data Sheet: T1G3000532-SM Data Sheet
RoHS Compliance: Qorvo, T1G3000532-SM, RF Power Transistor, RF Power Transistor, 0.03- 3.5 GHz, 5 W, 15.7 dB, 32 V, GaN (Rohs Compliant), RFMW Ltd (RFMW) Yes
Specifications
Frequency Min:
0.03 GHz
Frequency Max:
3.5 GHz
Output Power:
5 W
Gain:
15.7 dB
% typ. Efficiency:
64.7
Supply Voltage:
32 V
Id:
25 mA
Package:
5x5mm
Process:
GaN
Also Available
Part FunctionPart NumberDescription
Evaluation Board T1G3000532-SM EVAL Qorvo Evaluation board for T1G3000532-SM
Qorvo, RF Power Transistor, T1G3000532-SM, RFMW Ltd (RFMW)

The TriQuint T1G3000532-SM is a 5W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 3.5 GHz. The device is constructed with TriQuint's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Lead-free and ROHS compliant.

Pricing
QtyPrice
1 - 24 $68.00
25 - 99 $65.00
100 - 249 $53.00
250 - 499 $49.00
500 - 999 $45.00
Qty 
 
Availability
Available: 5
Call 1-877-367-7369 for Availability or Get a Quote
Qty