Qorvo: RF Power Transistor: T1G6003028-FL

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

T1G6003028-FL
RF Power Transistor, DC to 6 GHz, 30 W, 14 dB, 28 V, GaN
Manufacturer: Qorvo
Status: Obsolete
Data Sheet: T1G6003028-FL Data Sheet
RoHS Compliance: Qorvo, T1G6003028-FL, RF Power Transistor, RF Power Transistor, DC to 6 GHz, 30 W, 14 dB, 28 V, GaN (Rohs Compliant), RFMW Ltd (RFMW) Yes
Specifications
Frequency Min:
0 GHz
Frequency Max:
6 GHz
Output Power:
30 W
Gain:
14 dB
% typ. Efficiency:
50
Supply Voltage:
28 V
Id:
200 mA
Package:
Flange
Process:
GaN
Also Available
Part FunctionPart NumberDescription
Replacement T2G6003028-FL Qorvo RF Power Transistor, DC to 6 GHz, 30 W, 14 dB, 28 V, GaN
Replacement T2G6003028-FS Qorvo RF Power Transistor, DC to 6 GHz, 30 W, 14 dB, 28 V, GaN
Qorvo, RF Power Transistor, T1G6003028-FL, RFMW Ltd (RFMW)
Key Features:

30W, 28V, DC-6GHz GaN RF Power Transistor


The TriQuint T1G6003028-FL is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint's proven 0.25 um process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Pricing
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