Qorvo's UF3N170400B7S is a 1700 V, 400 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation.

Key Features

• On-resistance (RDS(on)): 400 mohm (typ)
• Voltage controlled
• Maximum operating temperature: 175 C
• Extremely fast switching not dependent on temperature
• Low gate charge
• Low intrinsic capacitance

Qorvo's UJ3N120070K3S is a 1200 V, 70 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for FET operation.

Key Features

• On-resistance (RDS(on)): 70 mohm (typ)
• Voltage controlled
• Maximum operating temperature: 175 C
• Extremely fast switching not dependent on temperature
• Low gate charge
• Low intrinsic capacitance

Qorvo's UJ3N120035K3S is a 1200 V, 35 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for FET operation.

Key Features

• On-resistance (RDS(on)): 35 mohm (typ)
• Voltage controlled
• Maximum operating temperature: 175 C
• Extremely fast switching not dependent on temperature
• Low gate charge
• Low intrinsic capacitance

Qorvo's UJ3N120065K3S is a 1200 V, 66 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation.

Key Features

• On-resistance (RDS(on)): 66 mohm (typ)
• Voltage controlled
• Maximum operating temperature: 175 C
• Extremely fast switching not dependent on temperature
• Low gate charge
• Low intrinsic capacitance

Qorvo's UJ3N065025K3S is a 650 V, 25 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for FET operation.

Key Features

• On-resistance (RDS(on)): 25 mohm (typ)
• Voltage controlled
• Maximum operating temperature: 175 C
• Extremely fast switching not dependent on temperature
• Low gate charge
• Low intrinsic capacitance

Qorvo's UJ3N065080K3S is a 650 V, 80 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for FET operation.

Key Features

• On-resistance (RDS(on)): 80 mohm (typ)
• Voltage controlled
• Maximum operating temperature: 175 C
• Extremely fast switching not dependent on temperature
• Low gate charge
• Low intrinsic capacitance