Qorvo's QPA2210D is a Ka-band power amplifier fabricated on Qorvo's 0.15 um GaN on SiC process (QGaN15). Operating between 27 and 31 GHz, it achieves 2.5 W linear power with −25 dBc intermodulation distortion products and 25 dB small signal gain. Saturated output power is 7 W with power-added efficiency of 32%.
QPA2210D is ideally suited to support satellite communications and 5G infrastructure. To simplify system integration, the QPA2210D is fully matched to 50 ohms with integrated DC blocking caps on both I/O ports.
The QPA2210D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications.
Lead-free and RoHS compliant.
Part Number:
QPA2210D
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Manufacturer:
Qorvo
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Export Status:
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Type:
RF Power Die
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Frequency Min:
27 GHz
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Frequency Max:
31 GHz
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P1dB:
38.4 dBm
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Gain:
16 dB
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Supply Voltage \ Vd Min:
20 V
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Quiescent Current \ Id:
200 mA
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Power Added Efficiency:
32 %
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Return Loss Input:
20 dB
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Return Loss Output:
7 dB
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Process:
GaN
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Description | Units Per Format | Available |
Description | Units Per Format | Available |