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QPD0005M

Model Number: QPD0005M

RF Power Transistor from Qorvo

RF Power Transistor, GaN, 2.5 to 5.0 GHz, 48 V, 6 W, DFN, 4.5 x 4.0 mm

Status: Discontinued | Datasheet: Request Data Sheet | RoHS Compliance: Rohs Compliant

The QPD0005M is a single-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 2.5 to 5.0 GHz. It is a single-stage, unmatched transistor capable of delivering PSAT of 5.9 W at +48 V operation.

Lead free and RoHS compliant.

Part Number: QPD0005M
Manufacturer: Qorvo
Frequency Min: 2.5 GHz
Frequency Max: 5 GHz
Output Power: 6 W
Gain: 18.6 dB
% Typ Efficiency: 74.1
Supply Voltage: 48 V
Id: 20 mA
Package: DFN
Process: GaN
Type: RF Power Discrete Transistors

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Product Specifications For QPD0005M RF Power Transistor

Part Number: QPD0005M Manufacturer: Qorvo Product Description: RF Power Transistor, GaN, 2.5 to 5.0 GHz, 48 V, 6 W, DFN, 4.5 x 4.0 mm

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QPD0005M

RF Power Transistor from Qorvo

RF Power Transistor, GaN, 2.5 to 5.0 GHz, 48 V, 6 W, DFN, 4.5 x 4.0 mm

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QPD0005M

RF Power Transistor from Qorvo

RF Power Transistor, GaN, 2.5 to 5.0 GHz, 48 V, 6 W, DFN, 4.5 x 4.0 mm

Technical Inquiry Request for QPD0005M RF Power Transistor

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