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QPD0009

Model Number: QPD0009

RF Power Transistor from Qorvo

RF Transistor, GaN, 3.4 to 3.6 GHz, 15 dB, 47 dBm, DFN, 7 x 6.5 mm

Status: Discontinued | Datasheet: Request Data Sheet | RoHS Compliance: Rohs Compliant

The QPD0009 is a dual-path discrete GaN on SiC HEMT in DFN package which operates from 3.4 to 3.6 GHz. The device is a single-stage power amplifier transistor for Doherty application. QPD0009 can deliver PAVG of 7.6 W at +48 V operation.

Lead-free and RoHS compliant.

Part Number: QPD0009
Manufacturer: Qorvo
Frequency Min: 3.4 GHz
Frequency Max: 3.6 GHz
Output Power: 7.6 W
Gain: 15 dB
% Typ Efficiency: 54
Supply Voltage: 48 V
Id: 32.5 mA
Package: DFN
Process: GaN
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Replacement	QPB3810 Qorvo	RF Power Amplifier, GaN, 3.4 to 3.8 GHz, 8W, 48V, SMT 12 x 8 mm

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Product Specifications For QPD0009 RF Power Transistor

Part Number: QPD0009 Manufacturer: Qorvo Product Description: RF Transistor, GaN, 3.4 to 3.6 GHz, 15 dB, 47 dBm, DFN, 7 x 6.5 mm

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QPD0009

RF Power Transistor from Qorvo

RF Transistor, GaN, 3.4 to 3.6 GHz, 15 dB, 47 dBm, DFN, 7 x 6.5 mm

Technical Inquiry Request for QPD0009 RF Power Transistor

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QPD0009

RF Power Transistor from Qorvo

RF Transistor, GaN, 3.4 to 3.6 GHz, 15 dB, 47 dBm, DFN, 7 x 6.5 mm

Technical Inquiry Request for QPD0009 RF Power Transistor

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