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QPD0010

Model Number: QPD0010

RF Power Transistor from Qorvo

RF Power Transistor, GaN, 2.5 to 2.7 GHz, 15 dB, 50.5 dBm, DFN, 7 x 6.5 mm

Status: Discontinued | Datasheet: Request Data Sheet | RoHS Compliance:

The QPD0010 is an asymmetric dual-path discrete GaN on SiC HEMT in a DFN package which operates from 2.5 to 2.7 GHz. In each path is a single-stage amplifier transistor. QPD0010 can deliver an average power of 15 W in a Doherty configuration.

Lead free and RoHS compliant.

Part Number: QPD0010
Manufacturer: Qorvo
Frequency Min: 2.5 GHz
Frequency Max: 2.7 GHz
Output Power: 15 W
Gain: 15 dB
% Typ Efficiency: 55
Supply Voltage: 48 V
Id: 65 mA
Package: 7.0X6.5mm DFN
Process: GaN
Type: RF Power Discrete Transistors

No Content Available

Part Function	Part Number	Description
Replacement	QPB3810 Qorvo	RF Power Amplifier, GaN, 3.4 to 3.8 GHz, 8W, 48V, SMT 12 x 8 mm

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Product Specifications For QPD0010 RF Power Transistor

Part Number: QPD0010 Manufacturer: Qorvo Product Description: RF Power Transistor, GaN, 2.5 to 2.7 GHz, 15 dB, 50.5 dBm, DFN, 7 x 6.5 mm

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Description	Units Per Format	Available

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QPD0010

RF Power Transistor from Qorvo

RF Power Transistor, GaN, 2.5 to 2.7 GHz, 15 dB, 50.5 dBm, DFN, 7 x 6.5 mm

Technical Inquiry Request for QPD0010 RF Power Transistor

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QPD0010

RF Power Transistor from Qorvo

RF Power Transistor, GaN, 2.5 to 2.7 GHz, 15 dB, 50.5 dBm, DFN, 7 x 6.5 mm

Technical Inquiry Request for QPD0010 RF Power Transistor

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