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QPD0020

Model Number: QPD0020

RF Power Transistor from Qorvo

RF Power Transistor, GaN, DC - 6 GHz, 18.8 dB, 45.4 dBm, 35 W, 48 V, QFN, 4 x 3 mm

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

The QPD0020 is a 35 Watt unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and can support both CW and pulsed mode of operations.

The QPD0020 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0020 can also be used as a driver in a macrocell base station power amplifier.

The device is housed in an industry-standard 4 x 3 mm surface mount QFN package.

Lead-free and ROHS compliant.

Part Number: QPD0020
Manufacturer: Qorvo
Frequency Min: 0 GHz
Frequency Max: 6 GHz
Output Power: 35 W
Gain: 18.8 dB
% Typ Efficiency: 77.8
Supply Voltage: 48 V
Id: 30 mA
Package: QFN
Process: GaN
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-QPD0020-001

Part Function	Part Number	Description
Evaluation Board	QPD0020EVB02 Qorvo	Evaluation Board for QPD0020

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Product Specifications For QPD0020 RF Power Transistor

Part Number: QPD0020 Manufacturer: Qorvo Product Description: RF Power Transistor, GaN, DC - 6 GHz, 18.8 dB, 45.4 dBm, 35 W, 48 V, QFN, 4 x 3 mm

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QPD0020

RF Power Transistor from Qorvo

RF Power Transistor, GaN, DC - 6 GHz, 18.8 dB, 45.4 dBm, 35 W, 48 V, QFN, 4 x 3 mm

Technical Inquiry Request for QPD0020 RF Power Transistor

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QPD0020

RF Power Transistor from Qorvo

RF Power Transistor, GaN, DC - 6 GHz, 18.8 dB, 45.4 dBm, 35 W, 48 V, QFN, 4 x 3 mm

Technical Inquiry Request for QPD0020 RF Power Transistor

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