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QPD0210

RF Power Transistor from Qorvo

RF Power Transistor, GaN, 1.8 to 2.7 GHz, 15.8 dB, 48 V,

Status: Discontinued | Datasheet: Request Data Sheet | RoHS Compliance: Rohs Compliant

The QPD0210 is a dual-path discrete GaN on SiC HEMT in a DFN package which operates from 1.8 to 2.7 GHz. In each path is a single-stage amplifier transistor.

QPD0210 can deliver PSAT of 16.6 W at +48 V operation through each path.

RoHS compliant.

Key Features

Operating Frequency Range: 1800 - 2700 MHz
Operating Drain Voltage: +48 V
Output Power (PSAT): 16.6 W
Drain Efficiency: 71.9%
Linear Gain: 18.8 dB

Part Number: QPD0210
Manufacturer: Qorvo
Frequency Min: 1.8 GHz
Frequency Max: 2.7 GHz
Output Power: 16.6 W
Gain: 18.8 dB
% Typ Efficiency: 71.9
Supply Voltage: 48 V
Id: 35 mA
Package: 7.0 x 6.5 mm
Process: GaN
Type: RF Power Discrete Transistors

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Product Specifications For QPD0210 RF Power Transistor

Part Number: QPD0210 Manufacturer: Qorvo Product Description: RF Power Transistor, GaN, 1.8 to 2.7 GHz, 15.8 dB, 48 V,

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Description	Units Per Format	Available

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QPD0210

RF Power Transistor from Qorvo

RF Power Transistor, GaN, 1.8 to 2.7 GHz, 15.8 dB, 48 V,

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QPD0210

RF Power Transistor from Qorvo

RF Power Transistor, GaN, 1.8 to 2.7 GHz, 15.8 dB, 48 V,

Technical Inquiry Request for QPD0210 RF Power Transistor

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