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QPD0211

Model Number: QPD0211

RF Power Transistor from Qorvo

RF Power Transistor, 2.5 to 2.7 GHz, 14.5 dB, 46.8 dBm, DFN, 7 x 6.5

Status: Discontinued | Datasheet: Request Data Sheet | RoHS Compliance:

The QPD0211 is a dual-path discrete GaN on SiC HEMT in DFN package which operates from 2.5 to 2.7 GHz. The device is a single-stage power amplifier transistor for Doherty application. QPD0211 can deliver PAVG of 7.6 W at +48 V operation.

Lead-free and RoHS compliant.

Part Number: QPD0211
Manufacturer: Qorvo
Frequency Min: 2.5 GHz
Frequency Max: 2.7 GHz
Output Power: 48 W
Gain: 14.5 dB
% Typ Efficiency: 55
Supply Voltage: 48 V
Id: 35 mA
Process: GaN
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	QPD0211EVB02 Qorvo	Evaluation Board for QPD0211

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Product Specifications For QPD0211 RF Power Transistor

Part Number: QPD0211 Manufacturer: Qorvo Product Description: RF Power Transistor, 2.5 to 2.7 GHz, 14.5 dB, 46.8 dBm, DFN, 7 x 6.5

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Description	Units Per Format	Available

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QPD0211

RF Power Transistor from Qorvo

RF Power Transistor, 2.5 to 2.7 GHz, 14.5 dB, 46.8 dBm, DFN, 7 x 6.5

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QPD0211

RF Power Transistor from Qorvo

RF Power Transistor, 2.5 to 2.7 GHz, 14.5 dB, 46.8 dBm, DFN, 7 x 6.5

Technical Inquiry Request for QPD0211 RF Power Transistor

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