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QPD1003

Model Number: QPD1003

RF Power Transistor from Qorvo

RF Transistor, 1.2 - 1.4 GHz, 500 W, 50 V, GaN, RF-565 Pkg

Status: No new designs | Data Sheet:

| RoHS Compliance: Rohs Compliant

The QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 Ω in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can support pulsed and linear operations.
Lead-free and ROHS compliant

Part Number: QPD1003
Manufacturer: Qorvo
Frequency Min: 1.2 GHz
Frequency Max: 1.4 GHz
Output Power: 500 W
Gain: 20 dB
% Typ Efficiency: 65
Supply Voltage: 50 V
Package: RF-565
Process: GaN
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	QPD1003 EVB Qorvo	Evaluation Board for QPD1003
Complementary Product	200X02R0 XSYSTOR Inc.	GaN Controller Module, 80 V Max, 300 mA Drive Current, 60 nS Rise Time, -2.0 V Shutdown Voltage
Complementary Product	765EP2R0 XSYSTOR Inc.	Evaluation Board
Replacement	QPD1006 Qorvo	RF Transistor, GaN, 1.2 to 1.4 GHz, 450 W, 50 V, Ni50-CW, 19 x 17.68

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Product Specifications For QPD1003 RF Power Transistor

Part Number: QPD1003 Manufacturer: Qorvo Product Description: RF Transistor, 1.2 - 1.4 GHz, 500 W, 50 V, GaN, RF-565 Pkg

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QPD1003

RF Power Transistor from Qorvo

RF Transistor, 1.2 - 1.4 GHz, 500 W, 50 V, GaN, RF-565 Pkg

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QPD1003

RF Power Transistor from Qorvo

RF Transistor, 1.2 - 1.4 GHz, 500 W, 50 V, GaN, RF-565 Pkg

Technical Inquiry Request for QPD1003 RF Power Transistor

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