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QPD1004

Model Number: QPD1004

RF Power Transistor from Qorvo

RF Transistor, .03 to 1.20 GHz, , 20.8 dB, 5 W, 50 V, GaN, 6 x 5 mm

Status: Discontinued | Data Sheet:

| RoHS Compliance: Rohs Compliant

The Qorvo QPD1004 is a 25W (P3dB), 50 Ohm input matched discrete GaN on SiC HEMT which operates from 30 to 1200 MHz on a 50 V supply rail. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.

The device is housed in an industry-standard 6 x 5 mm surface mount DFN package.

Lead-free and ROHS compliant. Evaluation boards are available upon request.

Part Number: QPD1004
Manufacturer: Qorvo
Frequency Min: 0.03 GHz
Frequency Max: 1.2 GHz
Output Power: 25 W
Gain: 20.8 dB
% Typ Efficiency: 73.2
Supply Voltage: 50 V
Package: DFN
Process: GaN
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-QPD1004-001

Part Function	Part Number	Description
Evaluation Board	QPD1004EVB1 Qorvo	Evaluation Board for QPD1004
Complementary Product	200X02R0 XSYSTOR Inc.	GaN Controller Module, 80 V Max, 300 mA Drive Current, 60 nS Rise Time, -2.0 V Shutdown Voltage
Complementary Product	620EP2R0AL50 XSYSTOR Inc.	Evaluation Board
Complementary Product	735E22R0 XSYSTOR Inc.	Evaluation Board, Controller, Switch
Complementary Product	795EP2R0 XSYSTOR Inc.	Evaluation Board

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Product Specifications For QPD1004 RF Power Transistor

Part Number: QPD1004 Manufacturer: Qorvo Product Description: RF Transistor, .03 to 1.20 GHz, , 20.8 dB, 5 W, 50 V, GaN, 6 x 5 mm

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Description	Units Per Format	Available

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QPD1004

RF Power Transistor from Qorvo

RF Transistor, .03 to 1.20 GHz, , 20.8 dB, 5 W, 50 V, GaN, 6 x 5 mm

Technical Inquiry Request for QPD1004 RF Power Transistor

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QPD1004

RF Power Transistor from Qorvo

RF Transistor, .03 to 1.20 GHz, , 20.8 dB, 5 W, 50 V, GaN, 6 x 5 mm

Technical Inquiry Request for QPD1004 RF Power Transistor

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