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QPD1008L

Model Number: QPD1008L

RF Power Transistor from Qorvo

RF Transistor, DC - 3.2 GHz, 125 W, 50 V, GaN, Eared NI-360

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

The QPD1008L is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz with a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited for military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed, CW, and linear operation.

Part Number: QPD1008L
Manufacturer: Qorvo
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-QPD1008L-001

Part Function	Part Number	Description
Evaluation Board	QPD1008LEVB2 Qorvo	Evaluation Board for QPD1008L, 1.1 - 1.5 GHz
Evaluation Board	QPD1008LPCB4B01 Qorvo	Evaluation Board for QPD1008L, .96 - 1.215 GHz
Complementary Product	200X02R0 XSYSTOR Inc.	GaN Controller Module, 80 V Max, 300 mA Drive Current, 60 nS Rise Time, -2.0 V Shutdown Voltage
Complementary Product	620EP2R0AL50 XSYSTOR Inc.	Evaluation Board
Complementary Product	735E22R0 XSYSTOR Inc.	Evaluation Board, Controller, Switch

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Product Specifications For QPD1008L RF Power Transistor

Part Number: QPD1008L Manufacturer: Qorvo Product Description: RF Transistor, DC - 3.2 GHz, 125 W, 50 V, GaN, Eared NI-360

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by 9/30/2025

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1 - 24

$373.02

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Description	Units Per Format	Available

Description	Units Per Format	Available

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QPD1008L

RF Power Transistor from Qorvo

RF Transistor, DC - 3.2 GHz, 125 W, 50 V, GaN, Eared NI-360

Technical Inquiry Request for QPD1008L RF Power Transistor

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QPD1008L

RF Power Transistor from Qorvo

RF Transistor, DC - 3.2 GHz, 125 W, 50 V, GaN, Eared NI-360

Technical Inquiry Request for QPD1008L RF Power Transistor

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