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QPD1010

Model Number: QPD1010

RF Power Transistor from Qorvo

RF Power Transistor, DC - 4.0 GHz, 10 W, 50 V, 3 x 3 mm, GaN

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

The QPD1010 from Qorvo is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

The device is housed in an industry-standard 3 x 3 mm surface mount QFN package.

Lead-free and ROHS compliant.

Part Number: QPD1010
Manufacturer: Qorvo
Frequency Min: 0 GHz
Frequency Max: 4 GHz
Output Power: 10 W
Gain: 24.7 dB
% Typ Efficiency: 70
Supply Voltage: 50 V
Package: 3 x 3 mm
Process: GaN
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-QPD1010-001

Part Function	Part Number	Description
Evaluation Board	QPD1010EVB01 Qorvo	Evaluation Board for QPD1010 .96 - 1.215 GHz
Complementary Product	200X02R0 XSYSTOR Inc.	GaN Controller Module, 80 V Max, 300 mA Drive Current, 60 nS Rise Time, -2.0 V Shutdown Voltage
Complementary Product	620EP2R0AL50 XSYSTOR Inc.	Evaluation Board
Complementary Product	735E22R0 XSYSTOR Inc.	Evaluation Board, Controller, Switch
Complementary Product	795EP2R0 XSYSTOR Inc.	Evaluation Board

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Product Specifications For QPD1010 RF Power Transistor

Part Number: QPD1010 Manufacturer: Qorvo Product Description: RF Power Transistor, DC - 4.0 GHz, 10 W, 50 V, 3 x 3 mm, GaN

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Description	Units Per Format	Available

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QPD1010

RF Power Transistor from Qorvo

RF Power Transistor, DC - 4.0 GHz, 10 W, 50 V, 3 x 3 mm, GaN

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QPD1010

RF Power Transistor from Qorvo

RF Power Transistor, DC - 4.0 GHz, 10 W, 50 V, 3 x 3 mm, GaN

Technical Inquiry Request for QPD1010 RF Power Transistor

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