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QPD1011

Model Number: QPD1011

RF Power Transistor from Qorvo

RF Power Transistor, .03 to 1.2 GHz, 21 dB, 39.4 dBm, 50 V, DFN/ SMT 6 x 5 mm

Status: Discontinued | Data Sheet:

| RoHS Compliance:

The Qorvo QPD1011 is a 7W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 1.2 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.

The device is housed in a 5 x 6 mm leadless SMT package that saves real estate of already space-constrained handheld radios.

Lead-free and ROHS compliant.

Evaluation boards are available upon request.

Part Number: QPD1011
Manufacturer: Qorvo
Frequency Min: 0.03 GHz
Frequency Max: 1.2 GHz
Output Power: 8.7 W
Gain: 21 dB
% Typ Efficiency: 60
Supply Voltage: 50 V
Id: 20 mA
Package: DFN/SMT
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-QPD1011-001

Part Function	Part Number	Description
Complementary Product	200X02R0 XSYSTOR Inc.	GaN Controller Module, 80 V Max, 300 mA Drive Current, 60 nS Rise Time, -2.0 V Shutdown Voltage
Complementary Product	620EP2R0AL50 XSYSTOR Inc.	Evaluation Board
Complementary Product	735E22R0 XSYSTOR Inc.	Evaluation Board, Controller, Switch
Complementary Product	795EP2R0 XSYSTOR Inc.	Evaluation Board

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Product Specifications For QPD1011 RF Power Transistor

Part Number: QPD1011 Manufacturer: Qorvo Product Description: RF Power Transistor, .03 to 1.2 GHz, 21 dB, 39.4 dBm, 50 V, DFN/ SMT 6 x 5 mm

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Description	Units Per Format	Available

Description	Units Per Format	Available

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QPD1011

RF Power Transistor from Qorvo

RF Power Transistor, .03 to 1.2 GHz, 21 dB, 39.4 dBm, 50 V, DFN/ SMT 6 x 5 mm

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QPD1011

RF Power Transistor from Qorvo

RF Power Transistor, .03 to 1.2 GHz, 21 dB, 39.4 dBm, 50 V, DFN/ SMT 6 x 5 mm

Technical Inquiry Request for QPD1011 RF Power Transistor

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