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QPD1011A

Model Number: QPD1011A

RF Power Transistor from Qorvo

RF Transistor, 30 to 1200 MHz, 12.8 dB, 7W, QFN, 6 x 5

Status: Featured | Data Sheet:

| RoHS Compliance: Rohs Compliant

QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios.

Part Number: QPD1011A
Manufacturer: Qorvo
Frequency Min: 0.03 GHz
Frequency Max: 1200 GHz
Output Power: 7 W
Gain: 12.8 dB
% Typ Efficiency: 38
Supply Voltage: 50 V
Process: GaN HEMT
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	QPD1011AEVB Qorvo	Evaluation Board for QPD1011A

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Product Specifications For QPD1011A RF Power Transistor

Part Number: QPD1011A Manufacturer: Qorvo Product Description: RF Transistor, 30 to 1200 MHz, 12.8 dB, 7W, QFN, 6 x 5

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QPD1011A

RF Power Transistor from Qorvo

RF Transistor, 30 to 1200 MHz, 12.8 dB, 7W, QFN, 6 x 5

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QPD1011A

RF Power Transistor from Qorvo

RF Transistor, 30 to 1200 MHz, 12.8 dB, 7W, QFN, 6 x 5

Technical Inquiry Request for QPD1011A RF Power Transistor

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