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QPD1013

Model Number: QPD1013

RF Power Transistor from Qorvo

RF Power Transistor, DC - 2700 MHz, 21.8 dB, 150 W, 65 V, GaN, 6 Pin DFN

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz. This is a single stage unmatched power amplifier transistor in an over-molded plastic package. The high power and wide bandwidth of the QPD1013 makes it suitable for many different applications from DC to 2.7 GHz.

The device is housed in an industry-standard 7.2 x 6.6 mm surface mount DFN package.

Lead-free and ROHS compliant. Evaluation boards are available upon request.

Part Number: QPD1013
Manufacturer: Qorvo
Frequency Min: 0 GHz
Frequency Max: 2.7 GHz
Output Power: 150 W
Gain: 21.8 dB
% Typ Efficiency: 64.8
Supply Voltage: 65 V
Id: 240 mA
Package: DFN
Process: GaN
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-QPD1013-001

Part Function	Part Number	Description
Evaluation Board	QPD1013EVB01 Qorvo	Evaluation Board for QPD1013 1.2 - 1.9 GHz
Complementary Product	200X02R0 XSYSTOR Inc.	GaN Controller Module, 80 V Max, 300 mA Drive Current, 60 nS Rise Time, -2.0 V Shutdown Voltage
Complementary Product	620EP2R0AL50 XSYSTOR Inc.	Evaluation Board
Complementary Product	735E22R0 XSYSTOR Inc.	Evaluation Board, Controller, Switch

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Product Specifications For QPD1013 RF Power Transistor

Part Number: QPD1013 Manufacturer: Qorvo Product Description: RF Power Transistor, DC - 2700 MHz, 21.8 dB, 150 W, 65 V, GaN, 6 Pin DFN

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Description	Units Per Format	Available

Description	Units Per Format	Available

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QPD1013

RF Power Transistor from Qorvo

RF Power Transistor, DC - 2700 MHz, 21.8 dB, 150 W, 65 V, GaN, 6 Pin DFN

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QPD1013

RF Power Transistor from Qorvo

RF Power Transistor, DC - 2700 MHz, 21.8 dB, 150 W, 65 V, GaN, 6 Pin DFN

Technical Inquiry Request for QPD1013 RF Power Transistor

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