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QPD1014

Model Number: QPD1014

RF Power Transistor from Qorvo

RF Power Transistor, 30 to 1200 MHz, 15 W, 50 V, GaN, 8-Pin, DFN, 6 x 5 mm

Status: Discontinued | Data Sheet:

| RoHS Compliance: Rohs Compliant

The QPD1014 is a 15W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 1200MHz on a 50V supply rail. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.

Lead-free and ROHS compliant.

Evaluation boards are available upon request.

Part Number: QPD1014
Manufacturer: Qorvo
Frequency Min: 0.03 GHz
Frequency Max: 1.2 GHz
Output Power: 15 W
Gain: 18.4 dB
% Typ Efficiency: 69.5
Supply Voltage: 50 V
Package: DFN
Process: GaN
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-QPD1014-001

Part Function	Part Number	Description
Evaluation Board	QPD1014EVB01 Qorvo	Evaluation Board for QPD1014
Complementary Product	200X02R0 XSYSTOR Inc.	GaN Controller Module, 80 V Max, 300 mA Drive Current, 60 nS Rise Time, -2.0 V Shutdown Voltage
Complementary Product	620EP2R0AL50 XSYSTOR Inc.	Evaluation Board
Complementary Product	735E22R0 XSYSTOR Inc.	Evaluation Board, Controller, Switch
Complementary Product	795EP2R0 XSYSTOR Inc.	Evaluation Board

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Product Specifications For QPD1014 RF Power Transistor

Part Number: QPD1014 Manufacturer: Qorvo Product Description: RF Power Transistor, 30 to 1200 MHz, 15 W, 50 V, GaN, 8-Pin, DFN, 6 x 5 mm

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Description	Units Per Format	Available

Description	Units Per Format	Available

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QPD1014

RF Power Transistor from Qorvo

RF Power Transistor, 30 to 1200 MHz, 15 W, 50 V, GaN, 8-Pin, DFN, 6 x 5 mm

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QPD1014

RF Power Transistor from Qorvo

RF Power Transistor, 30 to 1200 MHz, 15 W, 50 V, GaN, 8-Pin, DFN, 6 x 5 mm

Technical Inquiry Request for QPD1014 RF Power Transistor

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