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QPD1015

Model Number: QPD1015

RF Power Transistor from Qorvo

RF Power Transistor, DC - 3.7 GHz, 65 W, 50 V, GaN, NI-360

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

The QPD1015 is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz with a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited for military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed, CW, and linear operation.
Lead-free and ROHS compliant

Part Number: QPD1015
Manufacturer: Qorvo
Frequency Min: 0 GHz
Frequency Max: 3.7 GHz
Output Power: 65 W
Gain: 20 dB
% Typ Efficiency: 74
Supply Voltage: 50 V
Package: NI-360
Process: GaN
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-QPD1015-001

Part Function	Part Number	Description
Complementary Product	200X02R0 XSYSTOR Inc.	GaN Controller Module, 80 V Max, 300 mA Drive Current, 60 nS Rise Time, -2.0 V Shutdown Voltage
Complementary Product	620EP2R0AL50 XSYSTOR Inc.	Evaluation Board
Complementary Product	735E22R0 XSYSTOR Inc.	Evaluation Board, Controller, Switch

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Product Specifications For QPD1015 RF Power Transistor

Part Number: QPD1015 Manufacturer: Qorvo Product Description: RF Power Transistor, DC - 3.7 GHz, 65 W, 50 V, GaN, NI-360

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QPD1015

RF Power Transistor from Qorvo

RF Power Transistor, DC - 3.7 GHz, 65 W, 50 V, GaN, NI-360

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QPD1015

RF Power Transistor from Qorvo

RF Power Transistor, DC - 3.7 GHz, 65 W, 50 V, GaN, NI-360

Technical Inquiry Request for QPD1015 RF Power Transistor

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