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QPD1016L

Model Number: QPD1016L

RF Power Transistor from Qorvo

RF Power Transistor, GaN, DC to 1.7 GHz, 500 W, 50 V, NI-780 Pkg

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

The Qorvo QPD1016L is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, military and civilian radar, and test instrumentation. The device can support pulsed and linear operations.

ROHS compliant.

Evaluation boards are available upon request

Part Number: QPD1016L
Manufacturer: Qorvo
Frequency Min: 0 GHz
Frequency Max: 1.7 GHz
Output Power: 500 W
Gain: 15 dB
% Typ Efficiency: 67
Supply Voltage: 50 V
Id: 1000 mA
Package: NI-780
Process: GaN HEMT
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	QPD1016LEVB01 Qorvo	Evaluation Board for QPD1016L

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Product Specifications For QPD1016L RF Power Transistor

Part Number: QPD1016L Manufacturer: Qorvo Product Description: RF Power Transistor, GaN, DC to 1.7 GHz, 500 W, 50 V, NI-780 Pkg

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Description	Units Per Format	Available

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QPD1016L

RF Power Transistor from Qorvo

RF Power Transistor, GaN, DC to 1.7 GHz, 500 W, 50 V, NI-780 Pkg

Technical Inquiry Request for QPD1016L RF Power Transistor

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QPD1016L

RF Power Transistor from Qorvo

RF Power Transistor, GaN, DC to 1.7 GHz, 500 W, 50 V, NI-780 Pkg

Technical Inquiry Request for QPD1016L RF Power Transistor

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