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QPD1018

Model Number: QPD1018

RF Power Transistor from Qorvo

RF Power Transistor, 2.7 to 3.1 GHz, 500 W, 50 V, GaN, RF-565, 17.4 x 24

Status: Discontinued | Data Sheet:

| RoHS Compliance: Rohs Compliant

The QPD1018 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 2.7 to 3.1 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 ohm in an industry standard air cavity package and is ideally suited for military radar.

ROHS compliant.

Evaluation boards are available upon request.

Part Number: QPD1018
Manufacturer: Qorvo
Export Status:
Frequency Min: 2.7 GHz
Frequency Max: 3.1 GHz
Output Power: 500 W
Gain: 17.7 dB
% Typ Efficiency: 67.9
Supply Voltage: 50 V
Id: 750 mA
Package: RF-565
Process: GaN
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	QPD1018 EVB Qorvo	Evalkuation Board for QPD1018
Complementary Product	200X02R0 XSYSTOR Inc.	GaN Controller Module, 80 V Max, 300 mA Drive Current, 60 nS Rise Time, -2.0 V Shutdown Voltage
Complementary Product	765EP2R0 XSYSTOR Inc.	Evaluation Board

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Product Specifications For QPD1018 RF Power Transistor

Part Number: QPD1018 Manufacturer: Qorvo Product Description: RF Power Transistor, 2.7 to 3.1 GHz, 500 W, 50 V, GaN, RF-565, 17.4 x 24

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Description	Units Per Format	Available

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QPD1018

RF Power Transistor from Qorvo

RF Power Transistor, 2.7 to 3.1 GHz, 500 W, 50 V, GaN, RF-565, 17.4 x 24

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QPD1018

RF Power Transistor from Qorvo

RF Power Transistor, 2.7 to 3.1 GHz, 500 W, 50 V, GaN, RF-565, 17.4 x 24

Technical Inquiry Request for QPD1018 RF Power Transistor

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