Part number QPD1025L Product Type RF Power Transistor from Manufacturer Qorvo

Status: Standard | Data Sheet: pdf link image   | RoHS Compliance: Rohs Compliant

The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from 960 to 1215 MHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity, 4-lead, eared package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.
Lead-free and ROHS compliant.

Part Number:
QPD1025L
Manufacturer:
Qorvo
Frequency Min:
0.96 GHz
Frequency Max:
1.215 GHz
Output Power:
1800 W
Gain:
22.5 dB
% Typ Efficiency:
77.2
Supply Voltage:
65 V
Id:
1500 mA
Package:
NI-1230
Process:
GaN
Type:
RF Power Discrete Transistors
Modelithics Simulation Model
HMT-QOR-QPD1025L-001

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