The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from 960 to 1215 MHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity, 4-lead, eared package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.
Lead-free and ROHS compliant.
Part Number:
QPD1025L
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Manufacturer:
Qorvo
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Frequency Min:
0.96 GHz
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Frequency Max:
1.215 GHz
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Output Power:
1800 W
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Gain:
22.5 dB
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% Typ Efficiency:
77.2
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Supply Voltage:
65 V
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Id:
1500 mA
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Package:
NI-1230
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Process:
GaN
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Type:
RF Power Discrete Transistors
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Modelithics Simulation Model
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HMT-QOR-QPD1025L-001 HMT-QOR-QPD1025L-001 |
Description | Units Per Format | Available |
Description | Units Per Format | Available |