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QPD1026L

Model Number: QPD1026L

RF Power Transistor from Qorvo

RF Power Transistor, .42 to .45 GHz, 25.9 dB, 1300 W, NI-1230

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

The Qorvo QPD1026L is a 1300 W (P3dB) discrete GaN on SiC HEMT which operates from 420 to 450 MHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for amateur radio, public safety radio and radiolocation service. The device can support both CW and pulsed operations.

Part Number: QPD1026L
Manufacturer: Qorvo
Frequency Min: 0.42 GHz
Frequency Max: 0.45 GHz
Output Power: 1300 W
Gain: 25.9 dB
% Typ Efficiency: 80.8
Supply Voltage: 65 V
Package: 4-lead NI-1230 Package (Eared)
Process: GaN HEMT
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-QPD1026L-001

Part Function	Part Number	Description
Evaluation Board	QPD1026LEVB1 Qorvo	Evaluation Board for QPD1026L

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Product Specifications For QPD1026L RF Power Transistor

Part Number: QPD1026L Manufacturer: Qorvo Product Description: RF Power Transistor, .42 to .45 GHz, 25.9 dB, 1300 W, NI-1230

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QPD1026L

RF Power Transistor from Qorvo

RF Power Transistor, .42 to .45 GHz, 25.9 dB, 1300 W, NI-1230

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QPD1026L

RF Power Transistor from Qorvo

RF Power Transistor, .42 to .45 GHz, 25.9 dB, 1300 W, NI-1230

Technical Inquiry Request for QPD1026L RF Power Transistor

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