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QPD1028L

Model Number: QPD1028L

RF Power Transistor from Qorvo

RF Power Transistor, 1.2 to 1.4 GHz, 17 dB, NI780 Eared Package

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

The QPD1028L is a 750W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 59dBm of saturated output power with 18dB of large-signal gain and 70% of drain efficiency.

Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations.

Evaluation boards are available upon request.

Part Number: QPD1028L
Manufacturer: Qorvo
Frequency Min: 1.2 GHz
Frequency Max: 1.4 GHz
Gain: 18 dB
% Typ Efficiency: 70
Supply Voltage: 65 V
Process: GaN
Power: 750 W

Modelithics Simulation Model

HMT-QOR-QPD1028L-001

Part Function	Part Number	Description
Evaluation Board	QPD1028LEVB Qorvo	Evaluation Board for QPD1028L

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Product Specifications For QPD1028L RF Power Transistor

Part Number: QPD1028L Manufacturer: Qorvo Product Description: RF Power Transistor, 1.2 to 1.4 GHz, 17 dB, NI780 Eared Package

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QPD1028L

RF Power Transistor from Qorvo

RF Power Transistor, 1.2 to 1.4 GHz, 17 dB, NI780 Eared Package

Technical Inquiry Request for QPD1028L RF Power Transistor

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QPD1028L

RF Power Transistor from Qorvo

RF Power Transistor, 1.2 to 1.4 GHz, 17 dB, NI780 Eared Package

Technical Inquiry Request for QPD1028L RF Power Transistor

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