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QPD1035L

Model Number: QPD1035L

RF Power Transistor from Qorvo

RF Power Transistor, DC to 6 GHz, 12.1 dB, 47 dBm, 50 V, 4.1 x 13.97

Status: Featured | Data Sheet:

| RoHS Compliance: Rohs Compliant

The QPD1035L is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant.

Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz.

Typical Applications

Radar
Communications
Jammers

Part Number: QPD1035L
Manufacturer: Qorvo
Frequency Min: 0 GHz
Frequency Max: 6 GHz
Output Power: 50 W
Gain: 12.1 dB
% Typ Efficiency: 52.2
Supply Voltage: 50 V
Process: GaN HEMT
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	QPD1035LEVB0-50V Qorvo	Evaluation Board for QPD1035L
Complementary Product	TGF3020-SM Qorvo	RF Power Transistor, 4 to 6 GHz, 5 W, 12.7 dB, 32 V, GaN, Plastic, RF Input-Matched

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Product Specifications For QPD1035L RF Power Transistor

Part Number: QPD1035L Manufacturer: Qorvo Product Description: RF Power Transistor, DC to 6 GHz, 12.1 dB, 47 dBm, 50 V, 4.1 x 13.97

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QPD1035L

RF Power Transistor from Qorvo

RF Power Transistor, DC to 6 GHz, 12.1 dB, 47 dBm, 50 V, 4.1 x 13.97

Technical Inquiry Request for QPD1035L RF Power Transistor

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QPD1035L

RF Power Transistor from Qorvo

RF Power Transistor, DC to 6 GHz, 12.1 dB, 47 dBm, 50 V, 4.1 x 13.97

Technical Inquiry Request for QPD1035L RF Power Transistor

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