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QPD1881L

Model Number: QPD1881L

RF Power Transistor from Qorvo

RF Power Transistor, 2.7 to 2.9 GHz, 21.2 dB, 56.3 dBm, 400 W, 50 V, GaN, 2-lead, NI-780 Pkg ( Eared)

Status: Discontinued | Data Sheet:

| RoHS Compliance: Rohs Compliant

The Qorvo QPD1881L is a 400 W (P3dB) discrete GaN on SiC HEMT which operates from 2.7 to 2.9 GHz. Input pre-match within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for civilian radar, weather radar and test instrumentation. The device can support both CW and pulsed operations.

Lead-free and ROHS compliant.

Part Number: QPD1881L
Manufacturer: Qorvo
Frequency Min: 2.7 GHz
Frequency Max: 2.9 GHz
Output Power: 400 W
Gain: 21.2 dB
% Typ Efficiency: 75.1
Supply Voltage: 50 V
Id: 700 mA
Package: N-780
Process: GaN
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-QPD1881L-001

Part Function	Part Number	Description
Evaluation Board	QPD1881LEVB01 Qorvo	Evaluation Board for QPD1881L 2.7- 2.9 GHz
Complementary Product	200X02R0 XSYSTOR Inc.	GaN Controller Module, 80 V Max, 300 mA Drive Current, 60 nS Rise Time, -2.0 V Shutdown Voltage
Complementary Product	765EP2R0 XSYSTOR Inc.	Evaluation Board

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Product Specifications For QPD1881L RF Power Transistor

Part Number: QPD1881L Manufacturer: Qorvo Product Description: RF Power Transistor, 2.7 to 2.9 GHz, 21.2 dB, 56.3 dBm, 400 W, 50 V, GaN, 2-lead, NI-780 Pkg ( Eared)

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Description	Units Per Format	Available

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QPD1881L

RF Power Transistor from Qorvo

RF Power Transistor, 2.7 to 2.9 GHz, 21.2 dB, 56.3 dBm, 400 W, 50 V, GaN, 2-lead, NI-780 Pkg ( Eared)

Technical Inquiry Request for QPD1881L RF Power Transistor

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QPD1881L

RF Power Transistor from Qorvo

RF Power Transistor, 2.7 to 2.9 GHz, 21.2 dB, 56.3 dBm, 400 W, 50 V, GaN, 2-lead, NI-780 Pkg ( Eared)

Technical Inquiry Request for QPD1881L RF Power Transistor

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