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QPD2120D

Model Number: QPD2120

RF Power Transistor from Qorvo

RF Power Transistor, GaAs pHEMT, DC to 20 GHz, 11.5 dB, 29.5 dBm, DIE

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

Qorvo's QPD2120D is a discrete 1200-micron pHEMT which operates from DC to 20 GHz. The QPD2120D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2120D typically provides 31 dBm of output power at P1dB with gain of 11 dB and 57% power-added efficiency at 1 dB compression. This performance makes the QPD2120D appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.

Part Number: QPD2120D
Manufacturer: Qorvo
Frequency Min: 0 GHz
Frequency Max: 20 GHz
Gain: 11.5 dB
% Typ Efficiency: 29.5
Supply Voltage: 8 V
Id: 130 mA
Package: DIE
Process: GaAs
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-QPD2120D-001

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Product Specifications For QPD2120D RF Power Transistor

Part Number: QPD2120D Manufacturer: Qorvo Product Description: RF Power Transistor, GaAs pHEMT, DC to 20 GHz, 11.5 dB, 29.5 dBm, DIE

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Description	Units Per Format	Available

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QPD2120D

RF Power Transistor from Qorvo

RF Power Transistor, GaAs pHEMT, DC to 20 GHz, 11.5 dB, 29.5 dBm, DIE

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QPD2120D

RF Power Transistor from Qorvo

RF Power Transistor, GaAs pHEMT, DC to 20 GHz, 11.5 dB, 29.5 dBm, DIE

Technical Inquiry Request for QPD2120D RF Power Transistor

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