Qorvo's QPD2120D is a discrete 1200-micron pHEMT which operates from DC to 20 GHz. The QPD2120D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2120D typically provides 31 dBm of output power at P1dB with gain of 11 dB and 57% power-added efficiency at 1 dB compression. This performance makes the QPD2120D appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.
Part Number:
QPD2120D
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Manufacturer:
Qorvo
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Frequency Min:
0 GHz
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Frequency Max:
20 GHz
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Gain:
11.5 dB
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% Typ Efficiency:
29.5
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Supply Voltage:
8 V
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Id:
130 mA
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Package:
DIE
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Process:
GaAs
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Type:
RF Power Discrete Transistors
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Modelithics Simulation Model
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HMT-QOR-QPD2120D-001 HMT-QOR-QPD2120D-001 |
Description | Units Per Format | Available |
Description | Units Per Format | Available |