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QPD2160D

Model Number: QPD2160

RF Power Transistor from Qorvo

RF Power Transistor, GaAs pHEMT, DC to 20 GHz, 10.4 dB, 32.5 dBm, DIE

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

Qorvo's QPD2160D is a discrete 1600-micron pHEMT which operates from DC to 20 GHz. The QPD2160D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2160D typically provides 32.5 dBm of output power at P1dB with gain of 10.4 dB and 63% power-added efficiency at 1 dB compression. This performance makes the QPD2160D appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.

Part Number: QPD2160D
Manufacturer: Qorvo
Frequency Min: 0 GHz
Frequency Max: 20 GHz
Gain: 10.4 dB
% Typ Efficiency: 63
Supply Voltage: 8 V
Id: 258 mA
Package: DIE
Process: GaAs
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-QPD2160D-001

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Product Specifications For QPD2160D RF Power Transistor

Part Number: QPD2160D Manufacturer: Qorvo Product Description: RF Power Transistor, GaAs pHEMT, DC to 20 GHz, 10.4 dB, 32.5 dBm, DIE

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Description	Units Per Format	Available

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QPD2160D

RF Power Transistor from Qorvo

RF Power Transistor, GaAs pHEMT, DC to 20 GHz, 10.4 dB, 32.5 dBm, DIE

Technical Inquiry Request for QPD2160D RF Power Transistor

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QPD2160D

RF Power Transistor from Qorvo

RF Power Transistor, GaAs pHEMT, DC to 20 GHz, 10.4 dB, 32.5 dBm, DIE

Technical Inquiry Request for QPD2160D RF Power Transistor

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