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QPD2195

Model Number: QPD2195

RF Power Transistor from Qorvo

RF Power Transistor, 1.8 to 2.2 GHz, 19.1 dB, 400 W, 48 V, GaN, 2-lead, earless ceramic flange NI780 pkg

Status: Discontinued | Data Sheet:

| RoHS Compliance: Rohs Compliant

The QPD2195 is a discrete GaN on SiC HEMT which operates from 1.8 - 2.2 GHz. The device is a single stage pre-matched power amplifier transistor.

The QPD2195 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.

QPD2195 can deliver P3dB of 400 W at +48 V operation.

Lead-free and ROHS compliant.

Part Number: QPD2195
Manufacturer: Qorvo
Frequency Min: 1.8 GHz
Frequency Max: 2.2 GHz
Output Power: 400 W
Gain: 19.1 dB
% Typ Efficiency: 75.4
Supply Voltage: 48 V
Id: 720 mA
Package: NI-780
Process: GaN
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-QPD2195-001

Part Function	Part Number	Description
Evaluation Board	QPD2195PCB4B01 Qorvo	Evaluation Board for QPD2195
Complementary Product	200X02R0 XSYSTOR Inc.	GaN Controller Module, 80 V Max, 300 mA Drive Current, 60 nS Rise Time, -2.0 V Shutdown Voltage
Complementary Product	765EP2R0 XSYSTOR Inc.	Evaluation Board

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Product Specifications For QPD2195 RF Power Transistor

Part Number: QPD2195 Manufacturer: Qorvo Product Description: RF Power Transistor, 1.8 to 2.2 GHz, 19.1 dB, 400 W, 48 V, GaN, 2-lead, earless ceramic flange NI780 pkg

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QPD2195

RF Power Transistor from Qorvo

RF Power Transistor, 1.8 to 2.2 GHz, 19.1 dB, 400 W, 48 V, GaN, 2-lead, earless ceramic flange NI780 pkg

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QPD2195

RF Power Transistor from Qorvo

RF Power Transistor, 1.8 to 2.2 GHz, 19.1 dB, 400 W, 48 V, GaN, 2-lead, earless ceramic flange NI780 pkg

Technical Inquiry Request for QPD2195 RF Power Transistor

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