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QPD2730

Model Number: QPD2730

RF Power Transistor from Qorvo

RF Transistor, Power, 2.575 - 2.635 GHz, 53.5 dBm, 15.9 dB, 48 V, GaN, N-780 Ceramic Pkg

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

The Qorvo QPD2730 is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.575 to 2.635 GHz.

QPD2730 can deliver PAVG of 36 W at 48 V operation.

Lead-free and ROHS compliant.

Part Number: QPD2730
Manufacturer: Qorvo
Frequency Min: 2.575 GHz
Frequency Max: 2.635 GHz
Output Power: 220 W
Gain: 15.9 dB
% Typ Efficiency: 53
Supply Voltage: 48 V
Id: 210 mA
Package: N-780 Ceramic
Process: GaN
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Complementary Product	200X02R0 XSYSTOR Inc.	GaN Controller Module, 80 V Max, 300 mA Drive Current, 60 nS Rise Time, -2.0 V Shutdown Voltage
Complementary Product	765EP2R0 XSYSTOR Inc.	Evaluation Board

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Product Specifications For QPD2730 RF Power Transistor

Part Number: QPD2730 Manufacturer: Qorvo Product Description: RF Transistor, Power, 2.575 - 2.635 GHz, 53.5 dBm, 15.9 dB, 48 V, GaN, N-780 Ceramic Pkg

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QPD2730

RF Power Transistor from Qorvo

RF Transistor, Power, 2.575 - 2.635 GHz, 53.5 dBm, 15.9 dB, 48 V, GaN, N-780 Ceramic Pkg

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QPD2730

RF Power Transistor from Qorvo

RF Transistor, Power, 2.575 - 2.635 GHz, 53.5 dBm, 15.9 dB, 48 V, GaN, N-780 Ceramic Pkg

Technical Inquiry Request for QPD2730 RF Power Transistor

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