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QPD2731

Model Number: QPD2731

RF Power Transistor from Qorvo

RF Transistor, Power, 2.5 to 2.7 GHz, 16 dB, 48 V, 4-lead, earless, ceramic flange NI780

Status: Discontinued | Data Sheet:

| RoHS Compliance: Rohs Compliant

The Qorvo QPD2731 is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.5 to 2.7 GHz.

QPD2731 can deliver PAVG of 50 W at +48 V operation.

Part Number: QPD2731
Manufacturer: Qorvo
Frequency Min: 2.5 GHz
Frequency Max: 2.7 GHz
Output Power: 220 W
Gain: 16 dB
% Typ Efficiency: 60
Supply Voltage: 48 V
Id: 220 mA
Package: NI-780
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	QPD2731EVB1.0 Qorvo	Evaluation Board for QPD2731 2.6 GHz
Complementary Product	200X02R0 XSYSTOR Inc.	GaN Controller Module, 80 V Max, 300 mA Drive Current, 60 nS Rise Time, -2.0 V Shutdown Voltage
Complementary Product	765EP2R0 XSYSTOR Inc.	Evaluation Board

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Product Specifications For QPD2731 RF Power Transistor

Part Number: QPD2731 Manufacturer: Qorvo Product Description: RF Transistor, Power, 2.5 to 2.7 GHz, 16 dB, 48 V, 4-lead, earless, ceramic flange NI780

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QPD2731

RF Power Transistor from Qorvo

RF Transistor, Power, 2.5 to 2.7 GHz, 16 dB, 48 V, 4-lead, earless, ceramic flange NI780

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QPD2731

RF Power Transistor from Qorvo

RF Transistor, Power, 2.5 to 2.7 GHz, 16 dB, 48 V, 4-lead, earless, ceramic flange NI780

Technical Inquiry Request for QPD2731 RF Power Transistor

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