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QPD2795

Model Number: QPD2795

RF Power Transistor from Qorvo

RF Transistor, Power, 2.5 - 2.7 GHz, 55.6 dBm, 22 dB, GaN, NI-780 Ceramic

Status: Discontinued | Data Sheet:

| RoHS Compliance: Rohs Compliant

The Qorvo QPD2795 is a discrete GaN on SiC HEMT which operates from 2.5-2.7GHz. The device is a single stage matched power amplifier transistor.

The QPD2795 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.

QPD2795 can deliver saturated power (P3dB) of 360 W at 48 V operation.

Lead-free and ROHS compliant.

Part Number: QPD2795
Manufacturer: Qorvo
Frequency Min: 2 GHz
Frequency Max: 2 GHz
Output Power: 360 W
Gain: 22 dB
% Typ Efficiency: 72.5
Supply Voltage: 48 V
Id: 700 mA
Package: NI-780 Ceramic
Process: GaN
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	QPD2795 EVAL Qorvo	Evaluation Board for QPD2795
Complementary Product	200X02R0 XSYSTOR Inc.	GaN Controller Module, 80 V Max, 300 mA Drive Current, 60 nS Rise Time, -2.0 V Shutdown Voltage
Complementary Product	765EP2R0 XSYSTOR Inc.	Evaluation Board

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Product Specifications For QPD2795 RF Power Transistor

Part Number: QPD2795 Manufacturer: Qorvo Product Description: RF Transistor, Power, 2.5 - 2.7 GHz, 55.6 dBm, 22 dB, GaN, NI-780 Ceramic

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QPD2795

RF Power Transistor from Qorvo

RF Transistor, Power, 2.5 - 2.7 GHz, 55.6 dBm, 22 dB, GaN, NI-780 Ceramic

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QPD2795

RF Power Transistor from Qorvo

RF Transistor, Power, 2.5 - 2.7 GHz, 55.6 dBm, 22 dB, GaN, NI-780 Ceramic

Technical Inquiry Request for QPD2795 RF Power Transistor

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