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QPD3640

Model Number: QPD3640

RF Power Transistor from Qorvo

RF POWER TRANSISTOR, GaN, 3400 to 3800 MHz, 15.6 dB, 55.9 dBm, P4dB, 4- Lead, NI-780-4L pkg

Status: Discontinued | Data Sheet:

| RoHS Compliance: Rohs Compliant

The QPD3640 is a dual-path discrete GaN on SiC HEMT which operates on LTE downlink Band 42 (3.4-3.6 GHz) and Band 43 (3.6-3.8 GHz). The device is a single-stage, matched, power Doherty amplifier transistor.

QPD3640 can deliver P4dB of 389 W at +50 V operation.

Part Number: QPD3640
Manufacturer: Qorvo
Export Status:
Frequency Min: 3.4 GHz
Frequency Max: 3.8 GHz
Output Power: 300 W
Gain: 15.6 dB
% Typ Efficiency: 57.4
Supply Voltage: 48 V
Id: 342 mA
Package: NI-78--4L
Process: GaN HEMT
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	QPD3640EVB02 Qorvo	Evaluation Board for QPD3640 3.5 - 3.7 GHz
Evaluation Board	QPD3640EVB03 Qorvo	Evaluation Board for QPD3640 3.4 - 3.6 GHz
Evaluation Board	QPD3640EVB04 Qorvo	Evaluation Board for QPD3640 3.6 - 3.8 GHz

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Product Specifications For QPD3640 RF Power Transistor

Part Number: QPD3640 Manufacturer: Qorvo Product Description: RF POWER TRANSISTOR, GaN, 3400 to 3800 MHz, 15.6 dB, 55.9 dBm, P4dB, 4- Lead, NI-780-4L pkg

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QPD3640

RF Power Transistor from Qorvo

RF POWER TRANSISTOR, GaN, 3400 to 3800 MHz, 15.6 dB, 55.9 dBm, P4dB, 4- Lead, NI-780-4L pkg

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QPD3640

RF Power Transistor from Qorvo

RF POWER TRANSISTOR, GaN, 3400 to 3800 MHz, 15.6 dB, 55.9 dBm, P4dB, 4- Lead, NI-780-4L pkg

Technical Inquiry Request for QPD3640 RF Power Transistor

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