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QPD9300

Model Number: QPD9300

RF Power Transistor from Qorvo

RF Power Transistor, 9.2 to 9.7 GHz, 28 V, 30 W, GaN IMFET

Status: Discontinued | Data Sheet:

| RoHS Compliance: Rohs Compliant

The QPD9300 is a 30 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 9.2 to 9.7 GHz and a 28 V supply rail. The device is fully matched to 50 Ω in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can support pulsed and linear operations.

Part Number: QPD9300
Manufacturer: Qorvo
Export Status:
Frequency Min: 9.2 GHz
Frequency Max: 9.7 GHz
Output Power: 34.3 W
Gain: 9.1 dB
% Typ Efficiency: 48.9
Supply Voltage: 28 V
Process: GaN
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	QPD9300EVB3 Qorvo	Evaluation Board for QPD9300

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Product Specifications For QPD9300 RF Power Transistor

Part Number: QPD9300 Manufacturer: Qorvo Product Description: RF Power Transistor, 9.2 to 9.7 GHz, 28 V, 30 W, GaN IMFET

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QPD9300

RF Power Transistor from Qorvo

RF Power Transistor, 9.2 to 9.7 GHz, 28 V, 30 W, GaN IMFET

Technical Inquiry Request for QPD9300 RF Power Transistor

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QPD9300

RF Power Transistor from Qorvo

RF Power Transistor, 9.2 to 9.7 GHz, 28 V, 30 W, GaN IMFET

Technical Inquiry Request for QPD9300 RF Power Transistor

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