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RFG1M09090

Model Number: RFG1M09090

RF Power Transistor from Qorvo

RF Power Transistor, 0.7 - 1 GHz, 90 W, 20 dB, 48V, GaN, RF400-2

Status: Discontinued | Data Sheet:

| RoHS Compliance: Rohs Compliant

700MHz to 1000MHz 90W GaN Power Amplifier

The RFG1M09090 is optimized for commercial infrastructure applications in the 700MHz to 1000MHz frequency band, ideal for WCDMA and LTE applications. Using an advanced 48V high power density Gallium Nitride (GaN) semiconductor process optimized for high peak-to-average ratio applications, these high performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RFG1M09090 is an input-matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain, efficiency, and linearizable performance in a single amplifier.

Part Number: RFG1M09090
Manufacturer: Qorvo
Frequency Min: 0.7 GHz
Frequency Max: 1 GHz
Output Power: 90 W
Gain: 20 dB
% Typ Efficiency: 38
Supply Voltage: 48 V
Id: 300 mA
Package: Flange
Process: GaN
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Complementary Product	RFG1M09180 Qorvo	RF Power Transistor, 0.7 - 1 GHz, 180 W, 20 dB, 48V, GaN, RF400-2

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Product Specifications For RFG1M09090 RF Power Transistor

Part Number: RFG1M09090 Manufacturer: Qorvo Product Description: RF Power Transistor, 0.7 - 1 GHz, 90 W, 20 dB, 48V, GaN, RF400-2

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RFG1M09090

RF Power Transistor from Qorvo

RF Power Transistor, 0.7 - 1 GHz, 90 W, 20 dB, 48V, GaN, RF400-2

Technical Inquiry Request for RFG1M09090 RF Power Transistor

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RFG1M09090

RF Power Transistor from Qorvo

RF Power Transistor, 0.7 - 1 GHz, 90 W, 20 dB, 48V, GaN, RF400-2

Technical Inquiry Request for RFG1M09090 RF Power Transistor

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