The TriQuint TGA2573-2 is a wideband, high power GaN HEMT amplifier fabricated on TriQuint's production 0.25-?m GaN on SiC process. Operating from 2 to 18 GHz, it achieves 40 dBm saturated output power, 20% PAE, and 10 dB small signal gain at a drain bias of 30 V.
Fully matched to 50 ohm and with integrated DC blocking caps on both RF ports, the TGA2573-2 is ideally suited to support both commercial and defense related applications.
The TGA2573-2 is 100% DC and RF tested on-wafer to ensure compliance to performance specifications. Lead-free and RoHS compliant.
Part Number:
TGA2573-2
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Manufacturer:
Qorvo
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Export Status:
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Frequency Min:
2 GHz
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Frequency Max:
18 GHz
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Psat:
40 dBm
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Gain:
9 dB
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Supply Voltage \ Vd Max:
35 V
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Quiescent Current \ Id:
1200 mA
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Package:
DIE
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Power Added Efficiency:
23 %
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Description | Units Per Format | Available |
Description | Units Per Format | Available |