Status: Discontinued | Data Sheet: pdf link image   | RoHS Compliance: Rohs Compliant
The TriQuint TGF2021-02 is a discrete 2 mm pHEMT which operates from DC to 12 GHz. The part is designed using TriQuint's proven standard 0.35um power pHEMT production process. The TGF2021-02 typically provides greater than 33 dBm of saturated output power with power gain of 11 dB. The maximum power added efficiency is 59% which makes the TGF2021-02 appropriate for high efficiency applications. The TGF2021-02 is also ideally suited for point-to-point radio, high-reliability space and military applications. The part is lead-free and RoHS compliant and has a protective surface passivation layer providing environmental robustness.

Features:
  • Frequency range: DC to 12 GHz
  • > 33 dBm nominal Psat
  • 59% maximum PAE
  • 11 dB nominal power gain
  • Suitable for high reliability applications
  • 2 mm x 0.35 um Power pHEMT
  • Nominal bias Vd = 8 to 12 V, Idq = 150 to 250 mA (under RF drive, Id rises from 150 mA to 480 mA)
  • Chip dimensions: 0.57 x 0. 79 x 0.10 mm (0.022 x 0.031 x 0.004 in)
  • Part Number:
    TGF2021-02
    Manufacturer:
    Qorvo
    Frequency Min:
    0 GHz
    Frequency Max:
    12 GHz
    Output Power:
    2 W
    Gain:
    11 dB
    % Typ Efficiency:
    55
    Supply Voltage:
    12 V
    Id:
    150 mA
    Package:
    DIE
    Process:
    GaAs
    Type:
    RF Power Discrete Transistors
    No Content Available

    Technical Inquiry Request for TGF2021-02 RF Power Transistor

    Fields marked with * are required.
    Product Specifications For TGF2021-02 RF Power Transistor
    Design Information
    Contact Information


    Availability
    In Stock
    0
    Need products sooner?
    Pricing
    Pricing Available Upon Request. Request a Pricing Quote
    Product Notices
    No Current Notices