RFMW

Status: Standard | Data Sheet: pdf link image   | RoHS Compliance: Rohs Compliant
The TriQuint TGF2023-2-02 is a discrete 2.5 mm GaN on SiCHEMT which operates from DC to 18 GHz. The part is designed using TriQuint's proven 0.25 um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The device typically provides 41 dBm of saturated output power with power gain of 18dB at 3 GHz. The maximum power added efficiency is 58% which makes the TGF2023-2-02 appropriate for high efficiency applications. The part is lead-free and RoHS compliant.

Features:
  • Frequency range: DC to 18 GHz
  • 41 dBm nominal Psat at 3 GHz
  • 58% maximum PAE
  • 18 dB nominal power gain
  • Bias: Vd = 28 to 32 V, Idq = 250 mA, Vg = -3.6 V typical
  • Technology: 0.25 um Power GaN on SiC
  • Chip dimensions: 0.82 x 0.92 x 0.10 mm
    • Part Number:
    TGF2023-2-02
    Manufacturer:
    Qorvo
    Frequency Min:
    0 GHz
    Frequency Max:
    18 GHz
    Output Power:
    12 W
    Gain:
    12.3 dB
    % Typ Efficiency:
    56
    Supply Voltage:
    28 V
    Id:
    250 mA
    Package:
    DIE
    Process:
    GaN
    Type:
    RF Power Die
    Modelithics Simulation Model
    		 HMT-QOR-TGF2023-2-02-001

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    Product Specifications For TGF2023-2-02 RF Power Transistor
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