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TGF2929-HM

Model Number: TGF2929-HM

RF Power Transistor from Qorvo

RF Power Transistor, DC to 3.5 GHz, 100 W, 17.4 dB, 28 V, GaN, NI-360 Hermetic

Status: Discontinued | Data Sheet:

| RoHS Compliance: Rohs Compliant

The TGF2929-HM from Qorvo is a 100 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Hermetic package.

Lead-free and ROHS compliant.

Part Number: TGF2929-HM
Manufacturer: Qorvo
Frequency Min: 0.01 GHz
Frequency Max: 3.5 GHz
Output Power: 100 W
Gain: 17.4 dB
% Typ Efficiency: 72
Supply Voltage: 28 V
Package: Hermetic
Process: GaN
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	TGF2929-HM EVB Qorvo	Evaluation Board for TGF2929-HM
Complementary Product	200X02R0 XSYSTOR Inc.	GaN Controller Module, 80 V Max, 300 mA Drive Current, 60 nS Rise Time, -2.0 V Shutdown Voltage
Complementary Product	620EP2R0AL20 XSYSTOR Inc.	Evaluation Board, Controller, Switch
Complementary Product	735E22R0 XSYSTOR Inc.	Evaluation Board, Controller, Switch

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Product Specifications For TGF2929-HM RF Power Transistor

Part Number: TGF2929-HM Manufacturer: Qorvo Product Description: RF Power Transistor, DC to 3.5 GHz, 100 W, 17.4 dB, 28 V, GaN, NI-360 Hermetic

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TGF2929-HM

RF Power Transistor from Qorvo

RF Power Transistor, DC to 3.5 GHz, 100 W, 17.4 dB, 28 V, GaN, NI-360 Hermetic

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TGF2929-HM

RF Power Transistor from Qorvo

RF Power Transistor, DC to 3.5 GHz, 100 W, 17.4 dB, 28 V, GaN, NI-360 Hermetic

Technical Inquiry Request for TGF2929-HM RF Power Transistor

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