Part number TGF2965-SM Product Type RF Power Transistor from Manufacturer Qorvo

Status: Standard | Data Sheet: pdf link image   | RoHS Compliance: Rohs Compliant

The Qorvo TGF2965-SM is a 6W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 0.03 to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.

The device is housed in an industry-standard 3 x 3 mm surface mount QFN package.

Key Features

  • Frequency range: 0.03 - 3 GHz
  • Output power (P3dB): 6.0W at 2 GHz
  • Linear gain: 18 dB typical at 2 GHz
  • Typical PAE3dB: 63% at 2 GHz
  • Operating voltage: 32V
  • Low thermal resistance package
  • CW and pulse capable
  • 3 x 3 mm package

 

Typical Applications

  • Civilian Radar
  • Jammers
  • Land Mobile Radio Communications
  • Military Communications
  • Military Radar
  • Test Instrumentation
  • Wideband and Narrowband Amplifiers
Part Number:
TGF2965-SM
Manufacturer:
Qorvo
Frequency Min:
0.03 GHz
Frequency Max:
3 GHz
Output Power:
5 W
Gain:
18 dB
% Typ Efficiency:
63
Supply Voltage:
32 V
Id:
30 mA
Package:
QFN 3x3mm
Process:
GaN
Type:
RF Power Discrete Transistors
Modelithics Simulation Model
HMT-QOR-TGF2965-SM-001

Technical Inquiry Request for TGF2965-SM RF Power Transistor

Fields marked with * are required.
Product Specifications For TGF2965-SM RF Power Transistor
Design Information
Contact Information


Availability
In Stock
817
Need products sooner?
Quantity 
Pricing
Quantity
Price
1 - 24
$63.81
25 - 99
$45.78
100 - 249
$36.05
250 - 499
$32.45
500 - 999
$31.00
Request a Pricing Quote for greater quantities
Product Notices
No Current Notices