The Qorvo TGF3020-SM is a 5W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.
The device is housed in an industry-standard 3 x 3 mm surface mount QFN package.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
Part Number:
TGF3020-SM
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Manufacturer:
Qorvo
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Frequency Min:
4 GHz
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Frequency Max:
6 GHz
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Output Power:
5 W
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Gain:
12.7 dB
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% Typ Efficiency:
60.1
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Supply Voltage:
32 V
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Id:
326 mA
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Package:
QFN 3x3mm
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Process:
GaN
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Type:
RF Power Discrete Transistors
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Modelithics Simulation Model
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HMT-QOR-TGF3020-SM-001 HMT-QOR-TGF3020-SM-001 |
Description | Units Per Format | Available |
Description | Units Per Format | Available |